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Abstract: In this invited paper, we demonstrate that the contact interface resistance is a major bottleneck for advanced FinFET performance scaling (38% of the external resistance at 45nm gate pitch).

Chinese back-contact module manufacturer Aiko announced that it has achieved a power conversion efficiency of 24.8% in the commercial production of its Comet 3N panels, designed for commercial and ...

Abstract: PP IGBT is a new type of electronic device, which has different characteristics, such as compact structure, double-sided heat dissipation, and large scale parallel chip can be realized in a ...

Solarpro is building a 450 MW solar power plant in Heves county, Hungary. The company said it will be the country’s largest PV facility. The Europe-based engineering, procurement and construction and ...