Forward-looking: Building NAND with ferroelectric transistors can dramatically cut power consumption by sidestepping a core limitation of conventional NAND, according to a new study from the Samsung ...

TL;DR: Samsung has developed next-generation NAND flash storage that reduces power consumption by up to 96% compared to current technology. This breakthrough, based on ferroelectric transistors and ...

Chip manufacturers are warning of a shortage in DRAM, NAND and probably HBM memory chips because demand from cloud providers is outstripping supply. The problem is compounded by the Trump ...

Samsung Electronics is reportedly preparing to convert portions of its NAND flash production lines in Pyeongtaek and Hwaseong into DRAM facilities as the company races to meet surging demand for ...

Aaron McKinley is a writer, blogger and video game enthusiast with over five years of experience in web content and many more in playing games until the wee hours of the morning. His work spans many ...

SK hynix says it has begun mass production of its 321-layer 2-terabit (Tb) quad-level cell (QLC) NAND flash memory, which marks the first implementation of QLC NAND to employ more than 300 layers.

3D NAND flash memory is built by vertically stacking multiple alternating layers (tiers) of silicon nitride (SiN) and oxide (TEOS) on top of each other. A major challenge in producing multilayered 3D ...

A woman erupted in a temper tantrum and attacked a Southwest Airlines gate agent, smashing a computer and kicking him after missing multiple flights, video of the freak-out shows. The outraged ...

Selling a house tainted by murder or suicide presents a real challenge, and the prices they go for tend to be well below those for comparable but unstigmatized properties; photos of O J Simpson's ...

Vertical scaling is vital to increasing the storage density of 3D NAND. According to imec, airgap integration and charge trap layer separation are the keys to unlocking it. Inside the charge trap cell ...