Abstract: In this work, we report a critical semi- ON-state drain stress voltage above which the gate current increases significantly and degrades permanently in AlGaN/GaN high electron mobility ...
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Abstract: Using the precisely measured floating gate capacitance, we were able to extract the absolute values of programming efficiency in the 40-nm SuperFlash® memory cells at different voltage and ...
VAST is a library for program analysis and instrumentation of C/C++ and related languages. VAST provides a foundation for customizable program representation for a broad spectrum of analyses. Using ...
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