The quality of the interface between the GaN channel and the dielectric layer is critical for GaN devices, especially ...

This article focuses on challenges that designers face when making oscilloscope measurements on SiC designs during ...

The right gate driver enables a SiC or IGBT device to realize its performance potential in automotive applications.

MALVERN, Pa., June 16, 2026 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today expanded its Gen 7 platform of 1200 V FRED Pt ® Hyperfast rectifiers with six new devices in the eSMP ® ...

Wolfspeed's Gen 5 SiC MOSFET technology delivers a breakthrough in specific on-resistance, achieving up to 27% efficiency improvement over currently available competitive 1200 V solutions Technology ...

WEST LAFAYETTE, Ind. — Purdue University is advancing the frontier of microelectronics through a strategic partnership with GeChi Compound Semiconductor Co. (GCCS) to accelerate the commercialization ...

Good afternoon, and welcome to Diodes Incorporated's First Quarter 2026 Financial Results Conference Call. [Operator Instructions] As a reminder, this conference call is being recorded today, Thursday ...

Management introduced three-year financial targets, aiming for $2 billion annual revenue, $700 million gross profit, and over $4 non-GAAP EPS. Leadership identified design wins and new product ...

Over the last four decades, using planar and trench technologies, silicon carbide (SiC) MOSFETs have evolved from high-resistance, low-yield transistors to high-performance, mass-produced MOSFETs.

Samsung Electronics is reportedly restarting its silicon carbide (SiC) wafer foundry business, aiming to tap into the fast-growing next-generation power semiconductor market, reinforce its market ...

Abstract: The temperature-dependent reverse recovery characteristics of the SiC MOSFET body diode are comprehensively investigated in this paper. Initially, the switching transient of the SiC MOSFET ...