Abstract: Aiming for the temperature drift phenomenon of SiC phototransistor during ultraviolet detection process, the p-n junction is integrated into the 4H-SiC n-p-n phototransistor chip to enable ...
Abstract: Silicon carbide (SiC) ultraviolet (UV) phototransistors with normal operation up to 550 °C were fabricated and analyzed in this article. Under 280 nm UV illumination, the responsivity has ...
Copyright (c) 2010 Arduino LLC. All right reserved. This library is free software; you can redistribute it and/or modify it under the terms of the GNU Lesser General ...
New surface-mount optical sensors increase vertical headroom, enabling more flexible encoder and position-sensing designs across industrial and consumer electronics. Sensor A new generation of surface ...
Copyright (c) 2011-2014 Arduino LLC. All right reserved. Copyright © 2006-2008, Atmel Corporation All rights reserved. Copyright (c) 2001-2004 Swedish Institute of ...
† ‡ † Department of Materials Science and Engineering, ‡ California NanoSystems Institute, University of California, Los Angeles, Los Angeles, California 90095, United States § The Division of ...
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