Abstract: We report on the demonstration of an InGaP/AlGaAs heterojunction avalanche photodiode (APD) with an aluminum composition of 0.8, optimized for high-speed visible-light detection. The APD ...
Abstract: The integration of InGaAs with Si presents considerable challenges due to lattice mismatch and the difference in thermal expansion coefficient, interfacial impurities, and bubbles. To ...
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