Abstract: A 0.88pJ/bit 112Gb/s PAM4 transmitter is reported in 7nm FinFET CMOS with 1V ppd output amplitude. The quarter-rate TX architecture implements a 5-tap analog FFE using tap extension ...
Abstract: Subthreshold swing and contact resistance are key parameters for scaling transistors. This work fabricated high-performance IGZO-based transistors by incorporating an ITO contact interlayer.