IEEE

Scalable Model, Parameter Extraction of GaN Schottky Barrier Diode (SBD) and Its Application in C-Band Limiter Design

Abstract: In this article, a scalable model of thin-barrier lateral heterojunction AlGaN/GaN Schottky barrier diode (SBD) for RF simulation is proposed. By comparing the measured and modeled ...

Optics research uses dim light to produce bright LEDs

Researchers at Princeton and North Carolina State University have developed a technique that substantially improves the ...
IEEE

Degradation of 2.4-kV Ga₂O₃ Schottky Barrier Diode at High Temperatures Up to 500°C

Abstract: Ga2O3 Schottky barrier diodes (SBDs) featuring a field plate (FP) and a composite SiO2/SiNx dielectric layer beneath the FP were fabricated, achieving a breakdown voltage (BV) of 2.4 kV at ...

Antiferromagnetic metal exhibits diode-like behavior without external magnetic field

Antiferromagnetic (AF) materials are made up of atoms or molecules with atomic spins that align in antiparallel directions of ...
EDN

LiDAR’s power and size problem

Overcoming the known power and size limitations in LiDAR design is critical to enabling scalable, cost-effective adoption ...
Electronic Design

Power-Density Goals Can be Helped by Soft-Switching Options

Switching has almost always meant “hard" switching, which is simple but comes with all kinds of electrical and thermal ...