IEEE

Flexible 16nJ/c.s. 134S/s 6b MIM C-2C ADC using Dual Gate Self-aligned Unipolar Metal-Oxide TFTs

Abstract: In this work a metal-oxide (Indium Gallium Zinc Oxide) 6-bit successive approximation metal-insulator-metal C2C analog to digital converter (ADC) fabricated on 15μm thick flexible substrate ...
IEEE

On the Channel Hot-Electron’s Interaction With C-Doped GaN Buffer and Resultant Gate Degradation in AlGaN/GaN HEMTs

Abstract: In this work, we report a critical semi- ON-state drain stress voltage above which the gate current increases significantly and degrades permanently in AlGaN/GaN high electron mobility ...