Vishay Intertechnology VSH recently launched Gen 3 1200 V silicon carbide (SiC) Schottky diodes. The diodes boast high surge current robustness, low forward voltage drop, capacitive charge, and ...

A new electric vehicle (EV) charger solution is incorporating silicon carbide (SiC) MOSFETs and diodes to bolster power density and reliability. These SiC devices will be employed in the active AC-DC ...

Infineon Technologies AG introduced its third generation thinQ!(tm) SiC Schottky diodes. Featuring the industry's lowest device capacitance for any given current rating, which enhances overall system ...

Reliability, efficiency, and system cost are the three key elements in solar inverter design. Vast efforts are being devoted to enhance the performance of solar inverters and so reduce the price per ...

Littelfuse, Inc. has announced a TPSMB asymmetrical TVS diode series that protects sensitive electronics from voltage transients. The series is the first to market for TVS diodes that protect silicon ...

TOKYO--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “TW070J120B,” a 1200V silicon carbide (SiC) MOSFET for industrial applications that include large ...

This course is primarily aimed at first year graduate students interested in engineering or science, along with professionals with an interest in power electronics and semiconductor devices . It is ...