Magnachip to Expand Its Industrial IGBT Business Based on Advanced Traction Inverter IGBT Technology Jointly Developed in Strategic Partnership with Hyundai Mobis - Magnachip to leverage accumulated ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower cost than all-silicon-carbide inverters, it said. It involves connecting GaN ...

Given the many varieties of advanced power devices available, choosing the right power device for an application can be a daunting task. For solar inverter applications, it is well known that ...

Although they require more complex circuits, three-level inverters are more efficient than their two-level cousins. Effective partitioning simplifies implementation of the three-level configuration.

Magnachip Semiconductor has developed a 1,200-V, 75-A insulated gate bipolar transistor (IGBT) in a TO-247PLUS package for applications that depend on strict power ratings and high efficiency. Meeting ...

Renesas Electronics Corp. has announced the development of a new series of silicon (Si) insulated gate bipolar transistors (IGBTs) with low power losses in a small footprint. Targeting next-generation ...

As environmental impacts from climate change are becoming more severe, the use of renewable energy like solar power continues to expand globally to reduce carbon emissions. Omdia, a market research ...

Infineon has introduced an IGBT power module tailored to the needs of electric vehicle traction inverters in the 80 kW to 100 kW power class: the HybridPACK DC6i. This six pack module is optimized to ...

SEOUL, South Korea--(BUSINESS WIRE)-- Magnachip Semiconductor Corporation (MX) (“Magnachip” or the “Company”) today announced it has concluded an agreement with Hyundai Mobis Company Limited ...